Exploring Trapped Charge Evolution in P-Channel SONOS Memory Device

F. H. Li; Y. Y. Chiu; Y. H. Lee; R. W. Chang; B. J. Yang; W. T. Sun; E. Lee; C. W. Kuo; R. Shirota

doi:https://doi.org/10.7567/SSDM.2012.B-2-5L

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[B-2-5L] Exploring Trapped Charge Evolution in P-Channel SONOS Memory Device

F. H. Li¹、Y. Y. Chiu¹、Y. H. Lee¹、R. W. Chang¹、B. J. Yang¹、W. T. Sun²、E. Lee²、C. W. Kuo²、R. Shirota¹ (1.National Chiao Tung Univ.、2.eMemory Tech. Inc. , Taiwan)

https://doi.org/10.7567/SSDM.2012.B-2-5L

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