Exploring Trapped Charge Evolution in P-Channel SONOS Memory Device

F. H. Li; Y. Y. Chiu; Y. H. Lee; R. W. Chang; B. J. Yang; W. T. Sun; E. Lee; C. W. Kuo; R. Shirota

doi:https://doi.org/10.7567/SSDM.2012.B-2-5L

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[B-2-5L] Exploring Trapped Charge Evolution in P-Channel SONOS Memory Device

F. H. Li¹, Y. Y. Chiu¹, Y. H. Lee¹, R. W. Chang¹, B. J. Yang¹, W. T. Sun², E. Lee², C. W. Kuo², R. Shirota¹ (1.National Chiao Tung Univ., 2.eMemory Tech. Inc. , Taiwan)

https://doi.org/10.7567/SSDM.2012.B-2-5L

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