A Process Tech. and Characterization for 20nm PRAM

B. Kim; Y. Song; H. Jeong; D. Ha; Y. Kang; S. Ahn; J. Lee; K. Lee; D. Ahn; S. Nam; G. Jeong; C. Chung

doi:https://doi.org/10.7567/SSDM.2012.B-3-1

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[B-3-1] A Process Tech. and Characterization for 20nm PRAM

B. Kim¹, Y. Song¹, H. Jeong¹, D. Ha¹, Y. Kang¹, S. Ahn¹, J. Lee¹, K. Lee¹, D. Ahn¹, S. Nam¹, G. Jeong¹, C. Chung¹ (1.Samsung Electronics Corp. , Korea)

https://doi.org/10.7567/SSDM.2012.B-3-1

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