[B-3-1] A Process Tech. and Characterization for 20nm PRAM

B. Kim¹、Y. Song¹、H. Jeong¹、D. Ha¹、Y. Kang¹、S. Ahn¹、J. Lee¹、K. Lee¹、D. Ahn¹、S. Nam¹、G. Jeong¹、C. Chung¹ (1.Samsung Electronics Corp. , Korea)

https://doi.org/10.7567/SSDM.2012.B-3-1