[B-5-3] Formation free and high-performance cross-point resistive switching memory using Ir/TaOx/W structure
A. Prakash1、S. Maikap1、C. S. Lai1、W. S. Chen2、H. Y. Lee2、F. T. Chen2、M. J. Tsai2
(1.Chang Gung Univ.、2.Indus. Tech. Res. Inst. , Taiwan)
https://doi.org/10.7567/SSDM.2012.B-5-3
