[B-5-4L] Investigation of Resistive Switching Mechanism and Improved Memory Characteristics Using IrOx/high-kx/W Structure

S. Maikap¹, W. Banerjee¹, B. L. You¹, D. Jana¹, H. Y. Lee², W. S. Chen², F. T. Chen², M. J. Kao², M. J. Tsai² (1.Chang Gung Univ., 2.Electronics and Opto-Electronics Res. Laboratories, Indus. Tech. Res. Inst. , Taiwan)

https://doi.org/10.7567/SSDM.2012.B-5-4L