The Japan Society of Applied Physics

[B-6-3] Threshold switching and conductance quantization in Al/HfO2/Si(p) structures

J. Sune1, E. Miranda1, D. Jimenez1, X. Saura1, S. Long2, L. Ming2, J. M. Rafi3, F. Campabadal3 (1.Univ. Autonoma de Barcelona , Spain, 2.Inst. of Microelectronics Chinese Academy of Sciences , China, 3.Inst. de Microelectronica de Barcelona, CSIC , Spain)

https://doi.org/10.7567/SSDM.2012.B-6-3