The Japan Society of Applied Physics

[B-6-3] Threshold switching and conductance quantization in Al/HfO2/Si(p) structures

J. Sune1、E. Miranda1、D. Jimenez1、X. Saura1、S. Long2、L. Ming2、J. M. Rafi3、F. Campabadal3 (1.Univ. Autonoma de Barcelona , Spain、2.Inst. of Microelectronics Chinese Academy of Sciences , China、3.Inst. de Microelectronica de Barcelona, CSIC , Spain)

https://doi.org/10.7567/SSDM.2012.B-6-3