Fully Encapsulated Gate-All-Around InAs Nanowire FET

S. Sasaki; G. Zhang; K. Tateno; H. Suominen; Y. Harada; S. Saito; A. Fujiwara; T. Sogawa; K. Muraki

doi:https://doi.org/10.7567/SSDM.2012.C-3-3

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[C-3-3] Fully Encapsulated Gate-All-Around InAs Nanowire FET

S. Sasaki¹, G. Zhang¹, K. Tateno¹, H. Suominen¹, Y. Harada¹, S. Saito¹, A. Fujiwara¹, T. Sogawa¹, K. Muraki¹ (1.NTT Basic Research Labs., NTT Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.C-3-3

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