[C-3-3] Fully Encapsulated Gate-All-Around InAs Nanowire FET

S. Sasaki¹、G. Zhang¹、K. Tateno¹、H. Suominen¹、Y. Harada¹、S. Saito¹、A. Fujiwara¹、T. Sogawa¹、K. Muraki¹ (1.NTT Basic Research Labs., NTT Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.C-3-3