Growth of High-Quality h-BN Nanosheets for Graphene Electronics

J. Lee; K. H. Lee; H. J. Shin; I. Y. Lee; G. H. Kim; J. Y. Choi; S. W. Kim

doi:https://doi.org/10.7567/SSDM.2012.C-5-4

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[C-5-4] Growth of High-Quality h-BN Nanosheets for Graphene Electronics

J. Lee¹、K. H. Lee¹、H. J. Shin²、I. Y. Lee¹、G. H. Kim¹、J. Y. Choi²、S. W. Kim¹ (1.Sungkyunkwan Univ.、2.Samsung advanced Inst. of Tech. , Republic of Korea)

https://doi.org/10.7567/SSDM.2012.C-5-4

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