Growth of High-Quality h-BN Nanosheets for Graphene Electronics

J. Lee; K. H. Lee; H. J. Shin; I. Y. Lee; G. H. Kim; J. Y. Choi; S. W. Kim

doi:https://doi.org/10.7567/SSDM.2012.C-5-4

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[C-5-4] Growth of High-Quality h-BN Nanosheets for Graphene Electronics

J. Lee¹, K. H. Lee¹, H. J. Shin², I. Y. Lee¹, G. H. Kim¹, J. Y. Choi², S. W. Kim¹ (1.Sungkyunkwan Univ., 2.Samsung advanced Inst. of Tech. , Republic of Korea)

https://doi.org/10.7567/SSDM.2012.C-5-4

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