[D-1-2] Effective Work Function Engineering for Aggressively Scaled Planar and FinFET-based Devices with High-k Last Replacement Metal Gate Tech.

A. Veloso¹, S. A. Chew¹, Y. Higuchi², L. A. Ragnarsson¹, E. Simoen¹, T. Schram¹, T. Witters¹, A. Van Ammel¹, H. Dekkers¹, H. Tielens¹, K. Devriendt¹, N. Heylen¹, F. Sebaai¹, S. Brus¹, P. Favia¹, J. Geypen¹, H. Bender¹, A. Phatak³, M. S. Chen⁴, X. Lu⁴, S. Ganguli⁴, Y. Lei⁴, W. Tang⁴, X. Fu⁴, S. Gandikota⁴, A. Noori⁴, A. Brand⁴, N. Yoshida⁴, A. Thean¹, N. Horiguchi¹ (1.IMEC , Belgium, 2.Panasonic , Japan, 3.Applied Materials Belgium NV , Belgium, 4.Applied Materials Inc. , USA)

https://doi.org/10.7567/SSDM.2012.D-1-2