[D-1-5] Fabrication and Demonstration of Ultra Short Channel Atomically Thin SOI MOSFETs (AT-FET) Using Anisotropic Wet Etching and Lateral Dopant Diffusion

S. Migita¹、Y. Morita¹、M. Masahara¹、H. Ota¹ (1.GNC-AIST , Japan)

https://doi.org/10.7567/SSDM.2012.D-1-5