[D-2-4] Characterization of phosphorus-implanted n+/p Ge junctions by reversely biased leakage current and Raman spectroscopy

C. H. Lee^1,2, T. Tabata^1,2, T. Nishimura^1,2, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST , Japan)

https://doi.org/10.7567/SSDM.2012.D-2-4