[D-4-3] High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization

W. Takeuchi¹, N. Taoka¹, M. Kurosawa^1,2, M. Fukutome¹, M. Sakashita¹, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ., 2.JSPS , Japan)

https://doi.org/10.7567/SSDM.2012.D-4-3