[D-4-4] Aluminum Nitride for Ge-MIS Gate Stacks with Scalable EOT

T. Tabata^1,2、C. H. Lee^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST , Japan)

https://doi.org/10.7567/SSDM.2012.D-4-4