[D-6-4] Nickel Stanogermanide Ohmic Contact on N-type Germanium-Tin (Ge1-xSnx) using Se and S Implant and Segregation

Y. Tong¹, S. Su², B. Liu¹, L. Wang¹, P. S. Y. Lim¹, Y. Yang¹, W. Wang¹, K. L. Low¹, G. Zhang², C. Xue², B. Cheng², G. Han¹, Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore, 2.State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Academy of Sci. , P. R. China)

https://doi.org/10.7567/SSDM.2012.D-6-4