[D-6-4] Nickel Stanogermanide Ohmic Contact on N-type Germanium-Tin (Ge1-xSnx) using Se and S Implant and Segregation

Y. Tong¹、S. Su²、B. Liu¹、L. Wang¹、P. S. Y. Lim¹、Y. Yang¹、W. Wang¹、K. L. Low¹、G. Zhang²、C. Xue²、B. Cheng²、G. Han¹、Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore、2.State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Academy of Sci. , P. R. China)

https://doi.org/10.7567/SSDM.2012.D-6-4