[D-7-2] W vs. Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22nm Tech. Nodes

A. Veloso¹、S. A. Chew¹、T. Schram¹、H. Dekkers¹、A. Van Ammel¹、T. Witters¹、H. Tielens¹、N. Heylen¹、K. Devriendt¹、F. Sebaai¹、S. Brus¹、L. A. Ragnarsson¹、L. Pantisano¹、G. Eneman¹、L. Carbonell¹、O. Richard¹、1P. Favia¹、1J. Geypen¹、1H. Bender¹、1Y. Higuchi²、2A. Phatak³、3A. Thean¹、1N. Horiguchi¹ (1.IMEC , Belgium、2.Panasonic , Japan、3.Applied Materials Belgium NV , Belgium)

https://doi.org/10.7567/SSDM.2012.D-7-2