[E-1-4] High performance nanoscale n-MOS gate-all-around poly-Si thin film transistors by microwave annealing

M. S. Yeh¹、Y. C. Wu¹、Z. Y. Tang¹、H. F. Hung¹、Y. J. Lee² (1.Univ. of National Tsing Hua、2.National Nano Device Labs , Taiwan)

https://doi.org/10.7567/SSDM.2012.E-1-4