[E-1-4] High performance nanoscale n-MOS gate-all-around poly-Si thin film transistors by microwave annealing

M. S. Yeh¹, Y. C. Wu¹, Z. Y. Tang¹, H. F. Hung¹, Y. J. Lee² (1.Univ. of National Tsing Hua, 2.National Nano Device Labs , Taiwan)

https://doi.org/10.7567/SSDM.2012.E-1-4