Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel

N. Horiguchi; G. Zschaetzsch; Y. Sasaki; A. K. Kambham; M. Togo; L.-Å. Ragnarsson; J. Mitard; J. Franco; G. Eneman; G. Hellings; L. Witters; T. Romeo; L. Pantisano; N. Waldron; D. Lin; N. Collaert; W. Vandervorst; A. Thean

doi:https://doi.org/10.7567/SSDM.2012.E-2-1

[E-2-1] Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel

N. Horiguchi¹、G. Zschaetzsch¹、Y. Sasaki¹、A. K. Kambham¹、M. Togo¹、L.-Å. Ragnarsson¹、J. Mitard¹、J. Franco¹、G. Eneman¹、G. Hellings¹、L. Witters¹、T. Romeo¹、L. Pantisano¹、N. Waldron¹、D. Lin¹、N. Collaert¹、W. Vandervorst¹、A. Thean¹ (1.Inst. voor Ker and Stralings Fysika , Belgium)

https://doi.org/10.7567/SSDM.2012.E-2-1

2012 International Conference on Solid State Devices and Materials

[E-2-1] Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel