Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel

N. Horiguchi; G. Zschaetzsch; Y. Sasaki; A. K. Kambham; M. Togo; L.-Å. Ragnarsson; J. Mitard; J. Franco; G. Eneman; G. Hellings; L. Witters; T. Romeo; L. Pantisano; N. Waldron; D. Lin; N. Collaert; W. Vandervorst; A. Thean

doi:https://doi.org/10.7567/SSDM.2012.E-2-1

[E-2-1] Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel

N. Horiguchi¹, G. Zschaetzsch¹, Y. Sasaki¹, A. K. Kambham¹, M. Togo¹, L.-Å. Ragnarsson¹, J. Mitard¹, J. Franco¹, G. Eneman¹, G. Hellings¹, L. Witters¹, T. Romeo¹, L. Pantisano¹, N. Waldron¹, D. Lin¹, N. Collaert¹, W. Vandervorst¹, A. Thean¹ (1.Inst. voor Ker and Stralings Fysika , Belgium)

https://doi.org/10.7567/SSDM.2012.E-2-1

2012 International Conference on Solid State Devices and Materials

[E-2-1] Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel