[E-2-3] Impact of Junction Non-abruptness on Random Discrete Dopant Induced Variability in Intrinsic Channel Tri-gate MOSFETs

K. L. Wei¹、X. Y. Liu¹、G. Du¹ (1.Peking Univ. , China)

https://doi.org/10.7567/SSDM.2012.E-2-3