[E-2-5L] The impact of Side Surface Roughness on Carrier Mobility in Tri-Gate Silicon Nanowire MOSFETs

K. Mao¹、T. Saraya¹、T. Hiramoto¹ (1.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2012.E-2-5L