[E-4-1] A Physics-Based Compact Model of Tunnel-FETs Considering Nonlocal Effects

K. Fukuda¹、T. Mori¹、W. Mizubayashi¹、Y. Morita¹、A. Tanabe¹、M. Masahara¹、T. Yasuda¹、S. Migita¹、H. Ota¹ (1.GNC, AIST , Japan)

https://doi.org/10.7567/SSDM.2012.E-4-1