[E-4-1] A Physics-Based Compact Model of Tunnel-FETs Considering Nonlocal Effects
K. Fukuda1, T. Mori1, W. Mizubayashi1, Y. Morita1, A. Tanabe1, M. Masahara1, T. Yasuda1, S. Migita1, H. Ota1
(1.GNC, AIST , Japan)
https://doi.org/10.7567/SSDM.2012.E-4-1