[E-4-2] Tunnel Field Effect Transistor with Epitaxially Grown Steep Tunnel Junction Fabricated by Source/Drain-first and Tunnel-junction-last Processes

Y. Morita¹、T. Mori¹、S. Migita¹、W. Mizubayashi¹、A. Tanabe¹、K. Fukuda¹、M. Masahara¹、H. Ota¹ (1.GNC-AIST , Japan)

https://doi.org/10.7567/SSDM.2012.E-4-2