[E-4-2] Tunnel Field Effect Transistor with Epitaxially Grown Steep Tunnel Junction Fabricated by Source/Drain-first and Tunnel-junction-last Processes

Y. Morita¹, T. Mori¹, S. Migita¹, W. Mizubayashi¹, A. Tanabe¹, K. Fukuda¹, M. Masahara¹, H. Ota¹ (1.GNC-AIST , Japan)

https://doi.org/10.7567/SSDM.2012.E-4-2