[E-4-3] First Demonstration of Tunnel Field-Effect Transistor Using InGaAs/Si Junction

K. Tomioka^1,2、M. Yoshimura¹、T. Fukui¹ (1.Hokkaido Univ.、2.JST-PRESTO , Japan)

https://doi.org/10.7567/SSDM.2012.E-4-3