Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms

T. Ohashi; T. Takahashi; T. Kodera; S. Oda; K. Uchida

doi:https://doi.org/10.7567/SSDM.2012.E-5-1

[E-5-1] Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms

T. Ohashi¹, T. Takahashi¹, T. Kodera², S. Oda², K. Uchida³ (1.Dept. of Phys. Elec., Tokyo Tech., 2.QNERC, Tokyo Tech., 3.Dept. of Elect. Eng., Keio Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.E-5-1

2012 International Conference on Solid State Devices and Materials

[E-5-1] Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms