Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms

T. Ohashi; T. Takahashi; T. Kodera; S. Oda; K. Uchida

doi:https://doi.org/10.7567/SSDM.2012.E-5-1

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[E-5-1] Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms

T. Ohashi¹、T. Takahashi¹、T. Kodera²、S. Oda²、K. Uchida³ (1.Dept. of Phys. Elec., Tokyo Tech.、2.QNERC, Tokyo Tech.、3.Dept. of Elect. Eng., Keio Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.E-5-1

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