On the understanding of mobility degradation mechanisms in advanced CMOS devices: FDSOI versus bulk Tech.

I. Ben Akkez; C. Diouf; A. Cros; C. Fenouillet Beranger; P. Perreau; F. Balestra; G. Ghibaudo; F. Boeuf

doi:https://doi.org/10.7567/SSDM.2012.E-5-2

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[E-5-2] On the understanding of mobility degradation mechanisms in advanced CMOS devices: FDSOI versus bulk Tech.

I. Ben Akkez^1,3、C. Diouf^1,3、A. Cros¹、C. Fenouillet Beranger^1,2、P. Perreau^1,2、F. Balestra³、G. Ghibaudo³、F. Boeuf¹ (1.STmicroelectronics、2.CEA-LETI、3.IMEP/LAHC , France)

https://doi.org/10.7567/SSDM.2012.E-5-2

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