On the understanding of mobility degradation mechanisms in advanced CMOS devices: FDSOI versus bulk Tech.

I. Ben Akkez; C. Diouf; A. Cros; C. Fenouillet Beranger; P. Perreau; F. Balestra; G. Ghibaudo; F. Boeuf

doi:https://doi.org/10.7567/SSDM.2012.E-5-2

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[E-5-2] On the understanding of mobility degradation mechanisms in advanced CMOS devices: FDSOI versus bulk Tech.

I. Ben Akkez^1,3, C. Diouf^1,3, A. Cros¹, C. Fenouillet Beranger^1,2, P. Perreau^1,2, F. Balestra³, G. Ghibaudo³, F. Boeuf¹ (1.STmicroelectronics, 2.CEA-LETI, 3.IMEP/LAHC , France)

https://doi.org/10.7567/SSDM.2012.E-5-2

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