[E-6-3] Analysis of Read Margin Improvement for Low Voltage SRAM Composed of Nano-Scale MOSFETs with Ideal Subthreshold Factor and Small Variability

C. Tanaka¹、M. Saitoh¹、K. Ota¹、T. Numata¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.E-6-3