Characterization and Modeling of Back Bias Impacts on Remote-Coulomb-Limited Mobility in UTBB-FDSOI Devices

D. Rideau; F. Monsieur; Ben Akkez; S. Haendler; A. Cros; O. Nier; O. Saxod; C. Tavernier; H. Jaouen

doi:https://doi.org/10.7567/SSDM.2012.E-9-1

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[E-9-1] Characterization and Modeling of Back Bias Impacts on Remote-Coulomb-Limited Mobility in UTBB-FDSOI Devices

D. Rideau¹、F. Monsieur¹、Ben Akkez^1,2、S. Haendler¹、A. Cros¹、O. Nier^1,2、O. Saxod¹、C. Tavernier¹、H. Jaouen¹ (1.STMicroelectronics , STM、2.IMEP-LAHC , IMEP)

https://doi.org/10.7567/SSDM.2012.E-9-1

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