Characterization and Modeling of Back Bias Impacts on Remote-Coulomb-Limited Mobility in UTBB-FDSOI Devices

D. Rideau; F. Monsieur; Ben Akkez; S. Haendler; A. Cros; O. Nier; O. Saxod; C. Tavernier; H. Jaouen

doi:https://doi.org/10.7567/SSDM.2012.E-9-1

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[E-9-1] Characterization and Modeling of Back Bias Impacts on Remote-Coulomb-Limited Mobility in UTBB-FDSOI Devices

D. Rideau¹, F. Monsieur¹, Ben Akkez^1,2, S. Haendler¹, A. Cros¹, O. Nier^1,2, O. Saxod¹, C. Tavernier¹, H. Jaouen¹ (1.STMicroelectronics , STM, 2.IMEP-LAHC , IMEP)

https://doi.org/10.7567/SSDM.2012.E-9-1

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