Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire MOSFETs Based on Radio-Frequency Analysis

K. R. Kim; S. Shin; S. Cho; J. H. Lee; I. M. Kang

doi:https://doi.org/10.7567/SSDM.2012.E-9-2

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[E-9-2] Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire MOSFETs Based on Radio-Frequency Analysis

K. R. Kim¹, S. Shin¹, S. Cho², J. H. Lee³, I. M. Kang³ (1.Ulsan National Inst. of Sci. and Tech. , Korea, 2.Stanford Univ. , USA, 3.Kyungpook National Univ. , Korea)

https://doi.org/10.7567/SSDM.2012.E-9-2

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