[E-9-4] Radiation-Induced Parasitic Bipolar Effect in PMOS with Embedded SiGe

T. Kato¹, T. Uemura¹, H. Mori¹, Y. Ikeda¹, K. Suzuki¹, S. Satoh¹, H. Matsuyama¹ (1.Fujitsu Semiconductor Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.E-9-4