[E-9-4] Radiation-Induced Parasitic Bipolar Effect in PMOS with Embedded SiGe

T. Kato¹、T. Uemura¹、H. Mori¹、Y. Ikeda¹、K. Suzuki¹、S. Satoh¹、H. Matsuyama¹ (1.Fujitsu Semiconductor Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.E-9-4