Effective Mobility Enhancement in Al2O3/InSb/Si Quantum Well MOSFETs for Thin InSb Channel Layers

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

T. Ito¹, A. Kadoda¹, K. Nakayama¹, Y. Yasui¹, M. Mori¹, K. Maezawa¹, E. Miyazaki², T. Mizutani² (1.Univ. of Toyama, 2.Nagoya Univ. , Japan)