The Japan Society of Applied Physics

[F-2-6L] High Performance Normally Off Nanochannel Al2O3/GaN FinFET

K. S. Im1、K. W. Kim1、D. S. Kim1、H. S. Kang1、Y. W. Jo1、R. H. Kim1、C. H. Won1、K. I. Jang1、M. K. Kwon1、S. M. Jeon1、D. H. Son1、Y. M. Kwon1、J. H. Lee2 (1.Kyungpook National Univ.、2.Samsung LED Corp. Ltd. , Korea)

https://doi.org/10.7567/SSDM.2012.F-2-6L