[F-3-2] High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa

M. Kashiwano¹、J. Hirai¹、S. Ikeda¹、M. Fujimatsu¹、Y. Miyamoto¹ (1.Tokyo Tech , Japan)

https://doi.org/10.7567/SSDM.2012.F-3-2