[F-3-3] 120-GHz-band InP HEMT Amplifier with Gain-Enhanced Topology

M. Sato¹、S. Shiba¹、H. Matsumura¹、Y. Nakasha¹、T. Suzuki¹、N. Hara¹ (1.Fujitsu Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.F-3-3