The Japan Society of Applied Physics

2012 International Conference on Solid State Devices and Materials

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[F-4-2] Low Leakage Current for 1.6kV Breakdown GaN HFET with 6um-thick Semi-insulating GaN on 6-inch Si

S. M. Cho1, E. J. Hwang1, J. M. Kim1, J. H. Kim1, J. H. Shin1, J. Park1, Y. J. Jo1, W. S. Kim1, H. J. Lee1, K. Kim1, T. Jang1 (1.LG Electronics , Korea)

https://doi.org/10.7567/SSDM.2012.F-4-2