[F-4-2] Low Leakage Current for 1.6kV Breakdown GaN HFET with 6um-thick Semi-insulating GaN on 6-inch Si

S. M. Cho¹、E. J. Hwang¹、J. M. Kim¹、J. H. Kim¹、J. H. Shin¹、J. Park¹、Y. J. Jo¹、W. S. Kim¹、H. J. Lee¹、K. Kim¹、T. Jang¹ (1.LG Electronics , Korea)

https://doi.org/10.7567/SSDM.2012.F-4-2