AlGaN/GaN-on-Sapphire MOS-HEMTs with Breakdown Voltage of 1400 V and On-State Resistance of 22 mΩ.cm2 using a CMOS-Compatible Gold-Free Process

X. Liu; C. Zhan; K. W. Chan; W. Liu; D. Z. Chi; L. S. Tan; K. J. Chen; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2012.F-4-3

[F-4-3] AlGaN/GaN-on-Sapphire MOS-HEMTs with Breakdown Voltage of 1400 V and On-State Resistance of 22 mΩ.cm2 using a CMOS-Compatible Gold-Free Process

X. Liu¹, C. Zhan¹, K. W. Chan², W. Liu³, D. Z. Chi⁴, L. S. Tan¹, K. J. Chen², Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore, 2.Hong Kong Univ. of Sci. and Tech. , Hong Kong, 3.Nanyang Technological Univ., 4.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

https://doi.org/10.7567/SSDM.2012.F-4-3

2012 International Conference on Solid State Devices and Materials

[F-4-3] AlGaN/GaN-on-Sapphire MOS-HEMTs with Breakdown Voltage of 1400 V and On-State Resistance of 22 mΩ.cm2 using a CMOS-Compatible Gold-Free Process