The Japan Society of Applied Physics

[F-4-3] AlGaN/GaN-on-Sapphire MOS-HEMTs with Breakdown Voltage of 1400 V and On-State Resistance of 22 mΩ.cm2 using a CMOS-Compatible Gold-Free Process

X. Liu1, C. Zhan1, K. W. Chan2, W. Liu3, D. Z. Chi4, L. S. Tan1, K. J. Chen2, Y. C. Yeo1 (1.National Univ. of Singapore , Singapore, 2.Hong Kong Univ. of Sci. and Tech. , Hong Kong, 3.Nanyang Technological Univ., 4.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

https://doi.org/10.7567/SSDM.2012.F-4-3