[F-4-3] AlGaN/GaN-on-Sapphire MOS-HEMTs with Breakdown Voltage of 1400 V and On-State Resistance of 22 mΩ.cm2 using a CMOS-Compatible Gold-Free Process

X. Liu¹、C. Zhan¹、K. W. Chan²、W. Liu³、D. Z. Chi⁴、L. S. Tan¹、K. J. Chen²、Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore、2.Hong Kong Univ. of Sci. and Tech. , Hong Kong、3.Nanyang Technological Univ.、4.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

https://doi.org/10.7567/SSDM.2012.F-4-3