The Japan Society of Applied Physics

[F-4-3] AlGaN/GaN-on-Sapphire MOS-HEMTs with Breakdown Voltage of 1400 V and On-State Resistance of 22 mΩ.cm2 using a CMOS-Compatible Gold-Free Process

X. Liu1、C. Zhan1、K. W. Chan2、W. Liu3、D. Z. Chi4、L. S. Tan1、K. J. Chen2、Y. C. Yeo1 (1.National Univ. of Singapore , Singapore、2.Hong Kong Univ. of Sci. and Tech. , Hong Kong、3.Nanyang Technological Univ.、4.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

https://doi.org/10.7567/SSDM.2012.F-4-3