[F-5-1] Improvement of current collapse by surface treatment and passivation layer in p-GaN gate GaN HEMT
T. Katsuno1, M. Kanechika1, K. Itoh1, K. Nishikawa1, T. Uesugi1, T. Kachi1
(1.Toyota Central R&D Labs. Inc. , Japan)
https://doi.org/10.7567/SSDM.2012.F-5-1
